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ASTM F 76 Document Information:
Title
Standard Test Methods for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Single-Crystal Semiconductors
ASTM International
Publication Date:
Oct 31, 1986
Scope:
These test methods cover two procedures for measuring the resistivity
and Hall coefficient of
single-crystal semiconductor specimens. These test methods differ most
substantially in their test
specimen requirements.
Test Method A, van der Pauw (1) - This test method requires a singly
connected test specimen
(without any isolated holes), homogeneous in thickness, but of
arbitrary shape. The contacts must
be sufficiently small and located at the periphery of the specimen.
The measurement is most easily
interpreted for an isotropic semiconductor whose conduction is
dominated by a single type of
carrier.
Test Method B, Parallelepiped or Bridge-Type - This test method
requires a specimen homogeneous in
thickness and of specified shape. Contact requirements are specified
for both the parallelepiped
and bridge geometries. These test specimen geometries are desirable
for anisotropic semiconductors
for which the measured parameters depend on the direction of current
flow. The test method is also
most easily interpreted when conduction is dominated by a single type
of carrier.
These test methods do not provide procedures for shaping, cleaning, or
contacting specimens;
however, a procedure for verifying contact quality is given.
NOTE 1 - Practice F 418 covers the preparation of gallium arsenide
phosphide specimens.
The method in Practice F 418 does not provide an interpretation of the
results in terms of basic
semiconductor properties (for example, majority and minority carrier
mobilities and densities).
Some general guidance, applicable to certain semiconductors and
temperature ranges, is provided in
the Appendix. For the most part, however, the interpretation is left
to the user.
Interlaboratory tests of these test methods (Section 19) have been
conducted only over a limited
range of resistivities and for the semiconductors, germanium, silicon,
and gallium arsenide.
However, the method is applicable to other semiconductors provided
suitable specimen preparation
and contacting procedures are known. The resistivity range over which
the method is applicable is
limited by the test specimen geometry and instrumentation sensitivity.
The values stated in acceptable metric units are to be regarded as the
standard. The values given
in parentheses are for information only. (See also 3.1.4.)
This standard does not purport to address all of the safety concerns,
if any, associated with its
use. It is the responsibility of the user of this standard to
establish appropriate safety and
health practices and determine the applicability of regulatory
limitations prior to use.
Keywords:
- gallium arsenide
- Hall coefficient
- Hall data
- Hall mobility
- Hall resistivity
- semiconductor
- silicon
- single crystal
- van der Pauw
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