ASTM F 980M Standard Guide for the Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices (Metric)

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ASTM F 980M Document Information:

Title
Standard Guide for the Measurement of Rapid Annealing of Neutron-Induced Displacement Damage in Silicon Semiconductor Devices (Metric)

ASTM International

Publication Date:
Jun 10, 1996

Scope:

This guide defines the requirements and procedures for testing silicon discrete semiconductor devices and integrated circuits for rapid-annealing effects from displacement damage resulting from neutron radiation. This test will produce degradation of the electrical properties of the irradiated devices and should be considered a destructive test. Rapid annealing of displacement damage is usually associated with bipolar technologies.

This standard does not purport to address all of the safety concerns, if any, associated with its use. It is the responsibility of the user of this standard to consult and establish appropriate safety and health practices and determine the applicability of regulatory limitations prior to use.

Keywords:

annealing factor

displacement damage

integrated circuits

neutron damage

neutron degradation

rapid annealing

semiconductor devices

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