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ASTM F 418 Document Information:
Title
Standard Practice for Preparation of Samples of the Constant Composition Region of Epitaxial Gallium Arsenide Phosphide for Hall Effect Measurements
ASTM International
Publication Date:
May 27, 1977
Scope:
This practice covers a procedure to be followed to free the constant
composition region of
epitaxially grown gallium arsenide phosphide, GaAs (1-x)Px, from the
substrate and graded region
on which it was grown in order to measure the electrical properties of
only the constant
composition region, which is typically 30 to 100 µm thick. It
also sets forth two alternative
procedures to be followed to make electrical contact to the specimen.
It is intended that this practice be used in conjunction with Test
Methods F 76.
The specific parameters set forth in this recommended practice are
appropriate for GaAs0.62P0.38,
but they can be applied, with changes in etch times, to material with
other compositions.
This practice does not deal with making or interpreting the Hall
measurement on a specimen prepared
as described herein, other than to point out the existence and
possible effects due to the
distribution of the free carriers among the two conduction band
minima.
This practice can also be followed in the preparation of specimens of
the constant composition
region for light absorption measurements or for mass or emission
spectrometric analysis.
This practice becomes increasingly difficult to apply as specimens
become thinner.
This standard does not purport to address all of the safety concerns,
if any, associated with its
use. It is the responsibility of the user of this standard to
establish appropriate safety and
health practices and determine the applicability of regulatory
limitations prior to use. For hazard
statement, see Section 9 and 11.9.2.4.
Keywords:
- epitaxial GaAsP
- gallium arsenide phosphide
- Hall coefficient
- Hall data
- Hall mobility
- resistivity
- sample preparation
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