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DLA MIL-PRF-19500/157: SEMICONDUCTOR DEVICE, DIODE, SILICON, TEMPERATURE COMPENSATED, VOLTAGE-REFERENCE, TYPES 1N941B-1, 1N943B-1, 1N944B-1, 1N945B-1, 1N946B-1, 1N941BUR-1, 1N943BUR-1, 1N944BUR-1, 1N945BUR-1, AND 1N946BUR-1, JAN, JANTX, JANTXV, AND JANS, RADIATION HARDENED (TOTAL DOSE ONLY) JANTXVM, D, L, R, F, G, H, AND JANSM, D, L, R, F, G, AND H

Publication Date: Apr 6, 2012
SDO: DLA: DLA Land and Maritime
 DOD Adopted   ANSI Approved Approved

This specification covers the performance requirements for 11.70 volts ±5 percent, silicon, temperature compensated, voltage-reference diodes. Four levels of product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500. Seven levels of radiation hardened (total dose only) product assurance are provided for each encapsulated device type as specified in MIL-PRF-19500.

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