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DLA MIL-S-19500/569: Semiconductor Device, Field Effect Transistors, N-Channel, Silicon Types 2N6966, 2N6967, 2N6968, and 2N6969 JANTX, JANTXV, and JANS

Publication Date: Jul 13, 2011
SDO: DLA: DLA Land and Maritime
 DOD Adopted   ANSI Approved Approved

This specification covers the detail requirements for an N-Channel, enhancement-mode, MOSFET, power transistor intended for use in high density power switching applications. Three levels of product assurance are provided for each device type as specified in MIL-S-19500.

See figure 1. TO-213AA. (formerly T066)

TABLE

TABLE Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Commander, Space and Naval Warfare Systems, ATTN: Code 8111, Washington Dc 20363, by using the self-addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter.

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